Growth of sprayed nanostructured copper (I) iodide (CuI) thin films at different precursor solution concentration

M. Amalina, M. Rusop
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Abstract

In this research, the effect of precursor concentration of CuI thin film deposited by spraying technique was studied. The CuI concentration varies from 0.05M to 0.5M. The CuI solution was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The deposition takes 15 min for 50ml at a constant temperature of 50°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. The structural properties were characterized by XRD with strong (111) orientation shows for all the CuI thin films. The Urbach energy as calculated from transmittance spectra increased up to 0.1M. The electrical properties indicates the decreased of conductivity as the concentration increased.
不同前驱体溶液浓度下喷涂纳米结构碘化铜薄膜的生长
在本研究中,研究了喷涂技术沉积的CuI薄膜的前驱体浓度的影响。CuI浓度在0.05M ~ 0.5M之间变化。将CuI粉末与50ml乙腈作为溶剂混合制备CuI溶液。在50°C恒温下,沉积50ml需15分钟。结果表明,CuI薄膜的性能与前驱体浓度密切相关。采用x射线衍射(XRD)表征了所有CuI薄膜的结构性能,发现其具有强(111)取向。通过透射光谱计算得到的乌尔巴赫能量增加到0.1M。电学性质表明,随着浓度的增加,电导率下降。
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