Monolithically integrated IMPATT diodes for Ka-band transmitters

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398204

C. Schollhorn, H. Xu, M. Morschbach, E. Kasper

引用次数: 2

Abstract

Emanating from S-parameter measurements on monolithically integrated IMPATT diodes in the Ka-band a completely integrated transmitter is designed and simulated. The resonator is built with coplanar waveguides. A planar slot antenna is used for the emission of the RF signal. To improve the performance of the antenna the silicon substrate has to be thinned to a thickness of 200 /spl mu/m.

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用于ka波段发射机的单片集成IMPATT二极管

从单片集成IMPATT二极管在ka波段的s参数测量出发，设计并仿真了一个完全集成的发射机。谐振腔是用共面波导构成的。射频信号的发射采用平面缝隙天线。为了提高天线的性能，硅衬底必须减薄到200 /spl mu/m的厚度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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