A high performance 2-GHz direct-conversion front end with single-ended RF input in 0.13 um CMOS

Yiping Feng, Gaku Takemura, S. Kawaguchi, P. Kinget
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引用次数: 5

Abstract

This paper describes a 2.1-GHz CMOS front-end with a single-ended low noise amplifier (LNA) and a double balanced, current-driven passive mixer. The LNA features an on-chip transformer load to perform single-ended to differential conversion. Implemented in a 0.13 um CMOS process, it achieves 30 dB conversion gain, a low noise figure of 3.1 dB, a 40 kHz 1/f noise corner, an in-band IIP3 of -12 dBm and IIP2 better than 39 dBm, while consuming only 12 mW from a 1.5 V power supply.
高性能2ghz直接转换前端,单端RF输入采用0.13 um CMOS
本文介绍了一种2.1 ghz CMOS前端,该前端采用单端低噪声放大器(LNA)和双平衡、电流驱动无源混频器。LNA具有片上变压器负载,可执行单端到差分转换。在0.13 um CMOS工艺中实现,可实现30 dB转换增益,3.1 dB低噪声系数,40 kHz 1/f噪声角,带内IIP3为-12 dBm, IIP2优于39 dBm,而1.5 V电源仅消耗12 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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