Flash memories: a review

Abstract

Summary form only given. Many approaches are being used to manufacture or develop flash memory products to meet various market needs. These approaches can be classified broadly according to programming mechanism: channel hot electron (including source-side injection) and Fowler-Nordheim tunnelling. Some of the technologies in manufacturing or in development are: NOR stack gate, split gate, source-side injection NAND, DINOR, AND. In addition, a host of technologies for embedded flash applications are in different stages of development. Multi-level cell technologies are being developed to reduce cost/bit. 3-D structures are being investigated to realize small cell size. This paper reviews the different memory technologies, principles of operation, the status, the tradeoffs in cost, performance and reliability. It also discusses emerging flash technologies to serve industrial and next generation consumer electronic products including low voltage, low power portable and mobile devices.