{"title":"Composite Resistor Technique for Process and Temperature Compensations of Low Power Ring Oscillators","authors":"H. Çetinkaya, A. Zeki, Alper Girgin, T. Karalar","doi":"10.1109/LASCAS.2019.8667567","DOIUrl":null,"url":null,"abstract":"A process and temperature compensation technique, namely, composite resistor, is adopted for the current controlled oscillators (CCOs). The core is a ring oscillator (RO) and oscillates at 1 MHz at room temperature (25°C) with 50% duty cycle. The temperature compensation is achieved between -20°C and 100°C, and after trimming, the inaccuracies of the output frequencies, 1 MHz, and 0.5 MHz, are below ±1% (3σ) in the same temperature range. As a result, 2 outputs are temperature compensated. The oscillator core consumes 750 nA, the biasing circuit consumes 360 nA, and the complete system consumes 1.256 μA, corresponding to 2 μW at 1.6 V battery voltage. The design, occupying 130 μm × 285 μm die area, is realized in a 0.18 μm Mixed-Signal RF Salicide (1P6M, 1.8V/3.3V) CMOS process.","PeriodicalId":142430,"journal":{"name":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 10th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2019.8667567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A process and temperature compensation technique, namely, composite resistor, is adopted for the current controlled oscillators (CCOs). The core is a ring oscillator (RO) and oscillates at 1 MHz at room temperature (25°C) with 50% duty cycle. The temperature compensation is achieved between -20°C and 100°C, and after trimming, the inaccuracies of the output frequencies, 1 MHz, and 0.5 MHz, are below ±1% (3σ) in the same temperature range. As a result, 2 outputs are temperature compensated. The oscillator core consumes 750 nA, the biasing circuit consumes 360 nA, and the complete system consumes 1.256 μA, corresponding to 2 μW at 1.6 V battery voltage. The design, occupying 130 μm × 285 μm die area, is realized in a 0.18 μm Mixed-Signal RF Salicide (1P6M, 1.8V/3.3V) CMOS process.