The irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463) Pub Date : 1999-07-12 DOI:10.1109/REDW.1999.816066

M. Saidoh, M. Fukuda, K. Arakawa, S. Tajima, H. Sunaga, K. Yotsumoto, T. Kamiya, R. Tanaka, T. Hirao, I. Nashiyama, T. Ohshima, H. Itoh, S. Okada, N. Nemoto, S. Kuboyama, S. Matsuda

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Abstract

Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan are described, which cover different radiation qualities, such as gamma-rays, electron beams and ion beams. Among them a stress is put on the facilities for the single-event phenomena (SEP) testing using ion beams with wide LET ranges as well as for the microscopic analysis of SEP using a microbeam of 1 /spl mu/m diameter.

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日本空间用半导体器件辐射容限试验用辐照设施

介绍了日本用于空间用半导体装置的辐射容限测试的辐照设施，这些设施涵盖了不同的辐射质量，例如伽马射线、电子束和离子束。其中重点介绍了使用宽LET范围离子束进行单事件现象(SEP)测试的设备，以及使用直径为1 /spl μ m的微束进行SEP微观分析的设备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

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