Vanadium oxide thin films fabricated by magnetron sputtering from V and V2O5 targets

C.A. Florian-Aguilar, D. Guzmán-Castillo, L. García-González, L. Zamora-Peredo, M. A. Vidales-Hurtado, C. Zuñiga-Islas, Y. J. Hernández-Torres
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Abstract

In this work, the different deposition parameters of vanadium oxide thin films by magnetron sputtering technique using V and V2O5 targets were studied. The V metal target was placed on the direct current (DC) source and the V2O5 target was coupled to the radio frequency (RF) source. The power of the targets was varied, being 40 W and 50 W for the DC source and 40 W, 50 W and 60 W for the RF. The films were deposited on Corning glass substrates, keeping the deposition time of each film at 30 min. The crystalline structure of the films was obtained by X-ray diffraction and an amorphous behavior was observed. The formation of VOx phases was observed by Raman spectroscopy and vibrational modes analysis. It is observed that the presence of the V2O5 phase increases with the applied source power. The formation of the V2O5 phase is inferred from the calculated band gaps, ranging between 2.24 and 2.60 eV for the prepared thin films. On the other hand, the hysteresis graphs between 25°C and 100°C present the characteristic behavior of thermochromic materials, and the best film appears to be obtained at a working power of 40 W from both targets.
V和V2O5靶材磁控溅射制备氧化钒薄膜
本文研究了以V和V2O5为靶材,磁控溅射制备氧化钒薄膜的不同工艺参数。V金属靶放置在直流(DC)源上,V2O5靶与射频(RF)源耦合。目标的功率是不同的,直流电源为40 W和50 W,射频电源为40 W、50 W和60 W。将膜沉积在康宁玻璃衬底上,每层膜的沉积时间保持在30 min。通过x射线衍射获得膜的晶体结构,并观察到膜的非晶行为。通过拉曼光谱和振动模式分析观察了VOx相的形成。观察到V2O5相的存在随着源功率的增大而增加。V2O5相的形成由计算得到的带隙推断,所得薄膜的带隙在2.24 ~ 2.60 eV之间。另一方面,在25°C和100°C之间的滞后图显示了热致变色材料的特征行为,并且在工作功率为40 W时,两种靶材都获得了最佳薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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