A new salicide process (PASET) for sub-half micron CMOS

Abstract

A Ti salicide process featuring pre-amorphization before Ti film deposition and sequential two-step sintering (PASET) for sub-half-micron CMOS is discussed. Pre-amorphization by As implantation can realize low and uniform sheet resistance TiSi/sub 2/ on highly As-doped n+ poly and diffusion layers with sub-half micron line width. Implanted As for pre-amorphization and sequential two step sintering prevents the TiSi/sub 2/ overgrowth on p+ poly and diffusion layers. The PASET process technology widens the process window. The resulting n- and p-MOSFETs show excellent characteristics.<>