600V SOI gate drive HVIC for medium power applications operating up to 200/spl deg/C

Abstract

The design, functionality and measurements of a fully integrated 600V SOI gate drive IC are presented. The seven-channel HVIC is aimed at three-phase systems for low power and medium power applications. Dielectric device isolation and detailed circuit design ensure operation up to a temperature of 200/spl deg/C. Robust signal processing has been given highest attention at all design stages. A dedicated signal reconstruction topology is presented to provide maximum immunity against parasitic coupling from the power plane. The measurements confirming the safe operation of the IC are given.