Improved radiation response of PDSOI LBBC BUSFET

Abstract

Partially Depleted Silicon-On-Insulator (PDSOI) Low Barrier Body Contact (LBBC) Body Under Source FET (BUSFET) is proposed by using ISE TCAD 2D process and device simulation. The difference between LBBC BUSFET and normal BUSFET is given. LBBC BUSFET shows improved resistance to radiation over normal BUSFET, thanks to lower body contact resistance and reduced junction barrier height. PDSOI LBBC BUSFET is more suitable for radiation hard applications.