Coupling effects of dual SiGe power amplifiers for 802.11n MIMO applications

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI:10.1109/RFIC.2006.1651092

Wei-Chun Hua, Po-Tsung Lin, Chun-Ping Lin, Che-Yung Lin, Huan-Lin Chang, Cheewee Liu, Tzu-Yi Yang, G. Ma

引用次数: 19

Abstract

The large-signal and small-signal coupling effects of dual SiGe power amplifiers (PAs) on a single chip for 802.11n multiple input multiple output (MIMO) applications are demonstrated for the first time. Deep trench isolation and grounded guard ring are used for crosstalk isolation at both transistor and circuit levels. The equivalent small-signal coupling at 2.45 GHz between two PAs is -30 dB. The PA delivers 18.1 dBm and 16.6 dBm with 3% EVM (OFDM, 64-QAM) in single and dual PA operation modes, respectively. The EVM degradation becomes severe as the relative interfering power level increases

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802.11n MIMO应用中双SiGe功率放大器的耦合效应

首次展示了802.11n多输入多输出(MIMO)应用中单芯片上双SiGe功率放大器(PAs)的大信号和小信号耦合效应。深沟隔离和接地保护环用于晶体管和电路级的串扰隔离。在2.45 GHz时，两个PAs之间的等效小信号耦合为- 30db。放大器在单和双放大器工作模式下分别输出18.1 dBm和16.6 dBm, EVM为3% (OFDM, 64-QAM)。随着相对干扰功率的增大，EVM的退化程度也随之加剧

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

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