Field Effect Light-Emitting Diode Integration for Enhanced Hole Utilization

Abstract

The performance of Gallium Nitride (GaN) light emitting diodes (LEDs) continues to be limited due to poor hole activation in p-type GaN. In this work, the field effect is applied to an LED though integration of the p-type layer with a capacitor. Additional band bending created is used to modulate all the holes in the p-type layer, leading to enhanced external quantum efficiency (EQE). Due to the additional hole utilization, the EQE is improved by a dramatic 115% over the conventional LED. The capacitor integration additionally creates a method of voltage control for LED, instead of current control. With additional holes being utilized, the work further explores the device as a means to mitigate the efficiency droop problem of LEDs.