{"title":"The effects of a double connected gate in a MESFET","authors":"A. Freundorfer","doi":"10.1109/ANTEM.2000.7851673","DOIUrl":null,"url":null,"abstract":"For the single connected gate common-source transistor, in a 0.8µm MESFET process, f<inf>max</inf> was measured to be 50 GHz and for the double connected gate f<inf>max</inf> was 58GHz. There is better than 16% improvement in bandwidth of the double connected gate over the single connected gate. The reduced R<inf>g</inf> due to the double connection on the gate should contribute to a lower noise transistor. It was also shown that for the common gate transistor f<inf>max</inf> also increased.","PeriodicalId":416991,"journal":{"name":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ANTEM.2000.7851673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
For the single connected gate common-source transistor, in a 0.8µm MESFET process, fmax was measured to be 50 GHz and for the double connected gate fmax was 58GHz. There is better than 16% improvement in bandwidth of the double connected gate over the single connected gate. The reduced Rg due to the double connection on the gate should contribute to a lower noise transistor. It was also shown that for the common gate transistor fmax also increased.
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