The Statistical Evaluation of Correlations between LRS and HRS Relaxations in RRAM Array

Abstract

The unique tail bits retention failure behavior is observed in the RRAM array. Unlike the previous reports on single device or the average value''s retention behavior, quick retention loss of tail bits is found for both LRS and HRS. By statistically characterized such relaxation effect of tail bits, physical models are built to quantitatively describe the relaxation behaviors of LRS and HRS. The correlation between LRS and HRS relaxations is explored. Interfacial migration of oxygen ions is clarified to be the possible reason for the relaxation, which can provide the basis of the optimization of retention properties in RRAM array.