Single step growth of buried InP layer using selective rapid thermal MOCVD

Abstract

Rapid thermal MOCVD process has been used to study the selective growth of InP on [001] InP substrate using an ion implanted mask-less definition for the selective epitaxy. The selectivity of InP growth on the un-implanted area is controlled by the TMIn partial pressure and can reach complete growth inhibition on the implanted area. We used the combined nature of the rapid thermal MOCVD system to demonstrate two additional steps: (a) in situ annealing of the ion implanted damaged area and (b) re-growth of Fe:InP layers on the primary "masked surface", to produce a buried layer in a single growth sequence. High lateral resolution and high quality un-doped and Fe doped semi-insulated InP layers are demonstrated.