Performance of MOCVD tantalum nitride diffusion barrier for copper metallization

1995 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1995-06-06 DOI:10.1109/VLSIT.1995.520844

S.C. Sun, M. Tsai, C. Tsai, H. Chiu

引用次数: 7

Abstract

A low-resistivity and low carbon concentration CVD TaN film has been realized by using a new precursor terbutylimido-tris-diethylamido tantalum (TBTDET). Results show that CVD TaN as a diffusion barrier for Cu has higher thermal stability up to 500/spl deg/C than CVD TiN of 450/spl deg/C.

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铜金属化MOCVD氮化钽扩散阻挡层性能研究

采用新型前驱体叔丁基三乙基氨基钽(TBTDET)制备了一种低电阻率、低碳浓度的CVD TaN薄膜。结果表明，CVD TaN作为Cu的扩散势垒，在500/spl°C时的热稳定性高于CVD TiN (450/spl°C)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 Symposium on VLSI Technology. Digest of Technical Papers

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