D. Howard, J. Poh, Tonmoy S. Mukerjee, J. Cressler
{"title":"A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications","authors":"D. Howard, J. Poh, Tonmoy S. Mukerjee, J. Cressler","doi":"10.1109/MWSCAS.2010.5548729","DOIUrl":null,"url":null,"abstract":"We present an ultra-wideband, Low Noise Amplifier (LNA) implemented in Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 3–20 GHz, and achieves a peak gain of 21.3 dB. The SiGe LNA exhibits a Noise Figure (NF) of 4.2–5.2 dB across an 8–18 GHz band and consumes 35.2 mA from a 3.3 V supply.","PeriodicalId":245322,"journal":{"name":"2010 53rd IEEE International Midwest Symposium on Circuits and Systems","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 53rd IEEE International Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2010.5548729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
We present an ultra-wideband, Low Noise Amplifier (LNA) implemented in Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 3–20 GHz, and achieves a peak gain of 21.3 dB. The SiGe LNA exhibits a Noise Figure (NF) of 4.2–5.2 dB across an 8–18 GHz band and consumes 35.2 mA from a 3.3 V supply.