Characterization of Supply and Substrate Noises in CMOS Digital Circuits

Hsien-Hung Wu, C. Fu, Yaw-Feng Wang, Pei-Wen Luo, Yen-Ming Chen, L. Cheng, C. Chien
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引用次数: 1

Abstract

The biggest contributors to the substrate noise are supply noises, since the power and ground wires are directly connected to the silicon substrate for CMOS digital cells. Clock trees in large digital designs can acquire large power consumption when thousands of flip-flops transitioning through the switching zone. Memories also draw significant instantaneous power when being accessed. In this paper, a measurement of the substrate noise in conjunction with the supply noises analyses were conducted on a real circuit system. The measured substrate noise waveforms were proportional to the power consumptions and substantially correlated with the supply noises for each test condition. As a result, these observations could be useful for modeling substrate noise effects and developing prevention methods.
CMOS数字电路中电源和衬底噪声的表征
基片噪声的最大贡献者是电源噪声,因为电源和地线直接连接到CMOS数字电池的硅基片上。在大型数字设计中,当成千上万个触发器在交换区转换时,时钟树会产生很大的功耗。存储器在被访问时也会产生显著的瞬时功率。本文对一个实际电路系统进行了衬底噪声测量和电源噪声分析。测量的衬底噪声波形与功耗成正比,并与每个测试条件下的电源噪声基本相关。因此,这些观察结果可用于模拟衬底噪声效应和开发预防方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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