A low voltage CMOS bandgap reference

Yeong-Tsair Lin, Wen-Yaw Chung, Dong-Shiuh Wu, Ho-Cheng Lin, R. Lin
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引用次数: 7

Abstract

In this paper, a low voltage bandgap reference (LVBR) is proposed and analyzed. An nMOS arrangement folded operational transconductance amplifier (OTA) is developed for the LVBR. From the Hspice simulation results, the proposed LVBR can be operated with sub-1V supply. The LVBR circuit, occupied an area of 0.12 mm/sup 2/, is design and fabricated in a doubly-poly quadruple-metal 0.35-/spl mu/m CMOS process. The circuit functions properly with minimum supply voltage of 0.88 V and consumes a power dissipation of 25 /spl mu/W. The circuit also provides a temperature coefficient of 20 ppm/K over a temperature range from -20 to 100/spl deg/C.
一个低电压CMOS带隙基准
本文提出并分析了一种低电压带隙基准电路(LVBR)。研制了一种用于LVBR的nMOS排列折叠运算跨导放大器。从Hspice仿真结果来看,所提出的LVBR可以在低于1v的电源下工作。采用双聚四金属0.35-/spl mu/m CMOS工艺设计和制造LVBR电路,电路面积为0.12 mm/sup / 2/。最小供电电压为0.88 V,功耗为25 /spl mu/W。该电路还提供了20 ppm/K的温度系数,温度范围从-20到100/spl度/C。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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