Direct measurement of the dynamic variability of 0.120µm2 SRAM cells in 28nm FD-SOI technology

Abstract

Dynamic variability of 28nm FD-SOI high density SRAMs has been directly measured and carefully modeled using a new technique based on the Supply Read Retention Voltage (SRRV) metric. It is proven that, for this technology, N&PBTI induced variability has only a small impact on the SRAM read stability after 10 years working at operating conditions.