Simulation Study of the Slope-Channel Double-Gate MOSFET for Low-Power Applications

Abstract

Double-Gate MOSFET (DG MOSFET) shows great suppression of the Short Channel Effects (SCEs) due to the enhanced gate-control capability but requires the extreme downscaling of channel thickness. To address these challenges, we propose a novel Slope-Channel Double-Gate MOSFET (SCDG MOSFET) to enhance the subthreshold performances while maintaining the channel thickness. The simulation results show that the SCDG MOSFET greatly improves the subthreshold performances compared to the conventional DG MOSFET. The main mechanism is the suppression of the SCEs attributed to the reduction of channel potential.