Optimized Fault-Tolerant Buffer Design for Network-on-Chip Applications

A. Pinheiro, J. Silveira, D. A. B. Tavares, Felipe Silva, C. Marcon
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引用次数: 4

Abstract

Newest technologies of integrated circuits manufacture allow billions of transistors arranged in a single chip, which requires a communication architecture with high scalability and parallelism degree, such as a Network-on-Chip (NoC). As the technology scales down, the probability of Multiple Cell Upsets (MCUs) increases, being Error Correction Code (ECC) the most used technique to protect stored information against MCUs. NoC buffers are components that suffer from MCUs induced by diverse sources, such as radiation and electromagnetic interference. Thereby, applying ECCs in NoC buffers may come as a solution for reliability issues, although increasing the design cost and requiring a buffer with higher storage capacity. This paper proposes an optimized buffer using an Extended Hamming code to deal with MCUs and enhance the protected information storage, pursuing to reduce the area and power required for ECC implementation. We guide the optimized buffer evaluation by measuring the fault tolerance efficiency, buffer area, power overhead and performance of the proposed technique. All tests included the comparison with a non-optimal appliance of ECC in a NoC buffer. The results show the proposed technique reduces the area and power overhead in buffers with ECC and allows a considerable fault tolerance against MCUs with a small performance impact.
片上网络应用的优化容错缓冲器设计
最新的集成电路制造技术允许在单个芯片上排列数十亿个晶体管,这需要具有高可扩展性和并行度的通信架构,例如片上网络(NoC)。随着技术规模的缩小,多单元故障(multi Cell Upsets, mcu)的概率增加,错误纠正码(Error Correction Code, ECC)是最常用的保护存储信息不受mcu攻击的技术。NoC缓冲器是受各种源(如辐射和电磁干扰)诱发的mcu影响的元件。因此,在NoC缓冲器中应用ecc可能是解决可靠性问题的一种方法,尽管会增加设计成本,并且需要具有更高存储容量的缓冲器。本文提出了一种采用扩展汉明码的优化缓冲器来处理mcu,增强保护信息存储,以减少ECC实现所需的面积和功耗。我们通过测量所提出的技术的容错效率、缓冲区面积、功耗和性能来指导优化的缓冲区评估。所有测试都包括与非最优ECC在NoC缓冲中的应用进行比较。结果表明,所提出的技术减少了ECC缓冲区的面积和功率开销,并允许对mcu具有相当大的容错性,同时性能影响很小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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