More on Structural Information from Thermal Impedance Measurements in Time Domain

Abstract

Thermal impedance measurement vs. time is one of the standard and well established methods for thermal characterization of semiconductor devices. From such measurements one usually can get behavioral information in the form of data, graphs or models for thermal simulation. Moreover, the results of these measurements contain also structural information about the thermal path that can be very useful in device assembly process characterization and control. Extraction of this kind of information, however, usually requires quite an involved processing of measured data with all the associated calculation burden and numerical errors. This work, following the line of work presented in previous editions of this conference, proposes a method to extract structural information from measured data that provides a better spatial resolution that can be useful in cases of thin substrates like DCB, so common in power module assembly.