Study of electrically active defects in high mobility HfO/sub 2/ MOSFETs

Abstract

We present a detailed analysis of electrically active gate oxide defects on damascene CMOS devices with a HfO/sub 2/ gate dielectric and a TiN/W gate electrode. The interface state density (D/sub it/) and the trapped oxide charge (N/sub it/) are determined by 2 and 3-level charge pumping analysis on high-quality nMOS and pMOS transistors. Furthermore, we discuss the influence of the gate stack defects on the carrier mobility in the channel and correlate the reduction of the gate oxide defect density to a mobility improvement for both electrons and holes.