N-type SiGe/Ge superlattice structures for terahertz emission

Abstract

Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.