An experimental analysis of localized lifetime and resistivity control by Helium

Abstract

In this work we present an experimental study on the effects of helium implantation in silicon. Doses in the range 1 times 1010 - 5 times 1011 atoms/cm2 have been analysed. Results show that, increasing the dose, a saturation effect on the minimum lifetime that can be achieved occurs, while a marked effect on the resistivity of the material appears. The temperature dependence of the resistivity show that changes are due to a trap effect related to an energy level in the bandgap placed at Ec-0.23 eV that is the same of the dominant recombination center induced by helium implantation