L. Galatro, A. Akhnoukh, P. Magnée, M. Marchetti, M. Spirito
{"title":"Large signal characterization of millimeter wave devices using mixed signal active load-pull","authors":"L. Galatro, A. Akhnoukh, P. Magnée, M. Marchetti, M. Spirito","doi":"10.1109/ARFTG-2.2013.6737343","DOIUrl":null,"url":null,"abstract":"In this paper we present the large signal measurements and model verification of SiGe BiCMOS PA cells in the 60 GHz ISM band. The characterization is performed employing a custom developed mixed signal active load-pull test-bench. The measurement system is based on a WR-15 waveguide implementation providing large signal measurement capabilities in the 50-65 GHz band. In this contribution we detail on the test-bench optimization for higher power levels and the measured system stability. A high performance SiGe BiCMOS technology is used as a test vehicle to demonstrate the capability of the mixed signal active load-pull, to evaluate device technology and to benchmark the large-signal prediction of transistor model in the mm-wave band.","PeriodicalId":290319,"journal":{"name":"82nd ARFTG Microwave Measurement Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"82nd ARFTG Microwave Measurement Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG-2.2013.6737343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper we present the large signal measurements and model verification of SiGe BiCMOS PA cells in the 60 GHz ISM band. The characterization is performed employing a custom developed mixed signal active load-pull test-bench. The measurement system is based on a WR-15 waveguide implementation providing large signal measurement capabilities in the 50-65 GHz band. In this contribution we detail on the test-bench optimization for higher power levels and the measured system stability. A high performance SiGe BiCMOS technology is used as a test vehicle to demonstrate the capability of the mixed signal active load-pull, to evaluate device technology and to benchmark the large-signal prediction of transistor model in the mm-wave band.