A novel dual-channel body-tied MOSFET with self-aligned structure for analog/RF applications

Abstract

In this study, we propose a novel bulkSi-based device called dual-channel body-tied (DCBT) MOSFET using the self-aligned process without any extra masks. It reveals that our proposed DCBT FET has excellent S.S., decreased Isd,leak, lower Rsd, reduced Jg,limit, smaller lattice temperature, and higher thermal stability when compared with its DC counterpart. And, for the first time, we will investigate the analog/RF performance of our proposed DCBT FET. According to the numerical simulation results, the BT scheme can gain the excellent RF performances, increased rO (+53%) and higher fT (+20%), compared with a non-BT scheme.