Dark-field infrared microscopy investigations of precipitates in bulk gallium arsenide

Abstract

We employ dark-field infrared microscopy for the observation of arsenic precipitates in GaAs. This technique provides similar information that was thought, some time ago, to be only available by using techniques such as Light Scattering Tomography or Scanning Infrared Microscopy. We have investigated undoped GaAs grown by the LEC and Vertical Gradient Freeze techniques and that have undergone different post-growth heat treatments. Three dimensional mappings of precipitates are easily achieved.