A single nanoparticle silicon transistor

Y. Ding, A. Bapat, Y. Dong, C. Perrey, U. Kortshagen, C. B. Carter, S. Campbell
{"title":"A single nanoparticle silicon transistor","authors":"Y. Ding, A. Bapat, Y. Dong, C. Perrey, U. Kortshagen, C. B. Carter, S. Campbell","doi":"10.1109/DRC.2005.1553104","DOIUrl":null,"url":null,"abstract":"Unlike devices built using wafers, single nanoparticle semiconductor devices made from singlecrystal particles would allow the construction of high performance three-dimensional circuits and the integration of otherwise chemically and structurally incompatible single-crystal materials on virtually any substrate. This would dramatically reduce interconnect delay in integrated circuits, eliminate substrate parasitic effects, and allow the monolithic integration of complex systems.","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Unlike devices built using wafers, single nanoparticle semiconductor devices made from singlecrystal particles would allow the construction of high performance three-dimensional circuits and the integration of otherwise chemically and structurally incompatible single-crystal materials on virtually any substrate. This would dramatically reduce interconnect delay in integrated circuits, eliminate substrate parasitic effects, and allow the monolithic integration of complex systems.
单纳米硅晶体管
与使用晶圆制造的器件不同,由单晶颗粒制成的单纳米粒子半导体器件将允许构建高性能的三维电路,并将化学和结构不相容的单晶材料集成在几乎任何衬底上。这将大大减少集成电路的互连延迟,消除基板寄生效应,并允许复杂系统的单片集成。
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