A single nanoparticle silicon transistor

Y. Ding, A. Bapat, Y. Dong, C. Perrey, U. Kortshagen, C. B. Carter, S. Campbell
{"title":"A single nanoparticle silicon transistor","authors":"Y. Ding, A. Bapat, Y. Dong, C. Perrey, U. Kortshagen, C. B. Carter, S. Campbell","doi":"10.1109/DRC.2005.1553104","DOIUrl":null,"url":null,"abstract":"Unlike devices built using wafers, single nanoparticle semiconductor devices made from singlecrystal particles would allow the construction of high performance three-dimensional circuits and the integration of otherwise chemically and structurally incompatible single-crystal materials on virtually any substrate. This would dramatically reduce interconnect delay in integrated circuits, eliminate substrate parasitic effects, and allow the monolithic integration of complex systems.","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Unlike devices built using wafers, single nanoparticle semiconductor devices made from singlecrystal particles would allow the construction of high performance three-dimensional circuits and the integration of otherwise chemically and structurally incompatible single-crystal materials on virtually any substrate. This would dramatically reduce interconnect delay in integrated circuits, eliminate substrate parasitic effects, and allow the monolithic integration of complex systems.
单纳米硅晶体管
与使用晶圆制造的器件不同,由单晶颗粒制成的单纳米粒子半导体器件将允许构建高性能的三维电路,并将化学和结构不相容的单晶材料集成在几乎任何衬底上。这将大大减少集成电路的互连延迟,消除基板寄生效应,并允许复杂系统的单片集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信