High-frequency through-silicon Via (TSV) failure analysis

2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems Pub Date : 2011-12-12 DOI:10.1109/EPEPS.2011.6100237

Joohee Kim, Jonghyun Cho, J. Pak, Joungho Kim, J. Yook, J. C. Kim

引用次数: 17

Abstract

Despite the many advantages of 3D ICs, the yield loss experienced during the 3D IC fabrication process limits the commercialization of 3D IC products. In this study, we propose a novel method for TSV failure analysis and analyze TSV failures electrically to detect failures and their locations in TSV-based 3D IC.

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高频硅通孔(TSV)失效分析

尽管3D集成电路具有许多优点，但在3D集成电路制造过程中所经历的良率损失限制了3D集成电路产品的商业化。在本研究中，我们提出了一种新的TSV故障分析方法，并对TSV故障进行电气分析，以检测基于TSV的三维集成电路中的故障及其位置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems

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