Enhancement of localization capability of lock-in thermography for power semiconductor devices by searching high-emissivity films

Abstract

We will demonstrate the capability of lock-in thermography (LIT) for fault localization in a packaged power semiconductor device by using high-emissivity film. Different types of films were investigated to explore suitable type of film for LIT. Pasting the selected film on the heatsink of a packaged device increased the signal-to-noise ratio of LIT analysis, which enhanced the nondestructive localization ability of LIT.