A novel sensing scheme for an MRAM with a 5% MR ratio

2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185) Pub Date : 2001-06-14 DOI:10.1109/VLSIC.2001.934214

K. Yamada, N. Sakai, Y. Ishizuka, K. Mameno

引用次数: 6

Abstract

A novel sensing scheme for a magneto-resistive random access memory (MRAM) with a twin cell structure is proposed. It operates by sensing the difference in voltage between a couple of magnetic tunnel junctions (MTJ) in a transitional state. This method can achieve an MRAM with simple circuits, even if the magneto-resistance (MR) ratio is lower than 10%. Moreover, it features good endurance against the dispersion of device characteristics.

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一种具有5%磁流变比的MRAM传感新方案

提出了一种新的双胞结构磁阻随机存取存储器(MRAM)传感方案。它通过感应处于过渡状态的一对磁隧道结(MTJ)之间的电压差来工作。即使磁阻(MR)比低于10%，该方法也可以用简单的电路实现MRAM。此外，它还具有良好的抗器件特性分散的耐久性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)

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