Submicron silicon carbide CMOS for smartpower applications

Abstract

This paper describes the development of silicon carbide (SiC) submicron CMOS technology for smart power applications. NMOS transistors are fabricated with 0.5 /spl mu/m (drawn) channel lengths while PMOS transistors exhibit punchthrough at 0.8 /spl mu/m channel lengths. Digital logic circuits are also fabricated and exhibit nanosecond switching performance. Finally, performance limiting factors such as parasitic series resistance are also investigated.