Study Solid Solutions in CdS/CdTe Thin Films Heterosystems Obtaine by DC Magnetron Sputtering

A. I. Dobrozhan, G. Kopach, R. Mygushchenko, G. Khrypunov, M. M. Harchenko, Olesia V. Polezhaeva
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引用次数: 1

Abstract

The influence of physical and technological condensation mode by direct current magnetron sputtering on the crystal structure and optical properties of grown CdS and CdTe films, CdS/CdTe thin films heterosystems was investigated. Traditional chloride treatment of thin-film CdS/CdTe heterosystem leads to recrystallization of CdTe basic layer and its wurtzite-sphalerite phase transition. After Cl treatment a bandgap in CdTe increases up to 1.5 eV, For CdS/CdTe heterosystem a decrease of a bandgap to 1.45 eV is observed which is determined by formation of solid solutions of $\mathrm{CdS}_{\mathrm{x}}\mathrm{Te}_{\mathrm{1-x}}$ at the interphase boundary of CdS/CdTe. The value of the stoichiometric parameter $\mathrm{x}=0,1\pm 0,01$ was calculated using the optical researches data.
直流磁控溅射制备CdS/CdTe薄膜异质体系的固溶体研究
研究了直流磁控溅射物理凝结模式和工艺凝结模式对生长的CdS和CdTe薄膜、CdS/CdTe薄膜异质体系的晶体结构和光学性能的影响。薄膜CdS/CdTe异质体系的传统氯化物处理导致CdTe基层重结晶及其纤锌矿-闪锌矿相变。Cl处理后CdTe的带隙增大到1.5 eV,而cd /CdTe异质体系的带隙减小到1.45 eV,这是由于在cd /CdTe的界面边界处形成了$\mathrm{CdS}_{\mathrm{x}}\mathrm{Te}_{\mathrm{1-x}}$的固溶体。利用光学研究数据计算了化学计量参数$\ mathm {x}=0,1\pm 0,01$的值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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