A. I. Dobrozhan, G. Kopach, R. Mygushchenko, G. Khrypunov, M. M. Harchenko, Olesia V. Polezhaeva
{"title":"Study Solid Solutions in CdS/CdTe Thin Films Heterosystems Obtaine by DC Magnetron Sputtering","authors":"A. I. Dobrozhan, G. Kopach, R. Mygushchenko, G. Khrypunov, M. M. Harchenko, Olesia V. Polezhaeva","doi":"10.1109/NAP.2018.8915293","DOIUrl":null,"url":null,"abstract":"The influence of physical and technological condensation mode by direct current magnetron sputtering on the crystal structure and optical properties of grown CdS and CdTe films, CdS/CdTe thin films heterosystems was investigated. Traditional chloride treatment of thin-film CdS/CdTe heterosystem leads to recrystallization of CdTe basic layer and its wurtzite-sphalerite phase transition. After Cl treatment a bandgap in CdTe increases up to 1.5 eV, For CdS/CdTe heterosystem a decrease of a bandgap to 1.45 eV is observed which is determined by formation of solid solutions of $\\mathrm{CdS}_{\\mathrm{x}}\\mathrm{Te}_{\\mathrm{1-x}}$ at the interphase boundary of CdS/CdTe. The value of the stoichiometric parameter $\\mathrm{x}=0,1\\pm 0,01$ was calculated using the optical researches data.","PeriodicalId":239169,"journal":{"name":"2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAP.2018.8915293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The influence of physical and technological condensation mode by direct current magnetron sputtering on the crystal structure and optical properties of grown CdS and CdTe films, CdS/CdTe thin films heterosystems was investigated. Traditional chloride treatment of thin-film CdS/CdTe heterosystem leads to recrystallization of CdTe basic layer and its wurtzite-sphalerite phase transition. After Cl treatment a bandgap in CdTe increases up to 1.5 eV, For CdS/CdTe heterosystem a decrease of a bandgap to 1.45 eV is observed which is determined by formation of solid solutions of $\mathrm{CdS}_{\mathrm{x}}\mathrm{Te}_{\mathrm{1-x}}$ at the interphase boundary of CdS/CdTe. The value of the stoichiometric parameter $\mathrm{x}=0,1\pm 0,01$ was calculated using the optical researches data.