DC and Analog/RF Performance Analysis of Gate-Drain Underlapped and Channel Engineered TFET

Sudipta Ghosh, Sayan Bose, Wahid Anwar, Madhusree Banerjee, P. Venkateswaran, S. Sarkar
{"title":"DC and Analog/RF Performance Analysis of Gate-Drain Underlapped and Channel Engineered TFET","authors":"Sudipta Ghosh, Sayan Bose, Wahid Anwar, Madhusree Banerjee, P. Venkateswaran, S. Sarkar","doi":"10.1109/VLSIDCS53788.2022.9811483","DOIUrl":null,"url":null,"abstract":"In this paper, the DC and RF performance of a dual material double gate-drain underlapped tunnel FET (DMUDG TFET) and a DMUDG TFET with channel pocketing (DMUDG-CP TFET) are analyzed. It has been shown in the work that the proposed devices delivered a high ON current without compromising the ambipolar current of a conventional DMDG TFET. The proposed structural engineering served the device to have a reasonably good subthreshold swing (SS) and optimize the gate capacitance and gate-to-drain capacitance. The electrical characteristics of the proposed devices are analyzed in terms of subthreshold swing, ambipolar current, intrinsic capacitances, cut-off frequency, and transconductance. The work aims to improve the analog performance of the proposed devices without forfeiting the digital performance much. A detailed simulation study of the proposed structures is performed using the Silvaco Atlas 2-D device simulator and compared with existing structures of contemporary literature. The study reveals that the proposed structures can be utilized in RF applications and low-power VLSI applications as well.","PeriodicalId":307414,"journal":{"name":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS53788.2022.9811483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this paper, the DC and RF performance of a dual material double gate-drain underlapped tunnel FET (DMUDG TFET) and a DMUDG TFET with channel pocketing (DMUDG-CP TFET) are analyzed. It has been shown in the work that the proposed devices delivered a high ON current without compromising the ambipolar current of a conventional DMDG TFET. The proposed structural engineering served the device to have a reasonably good subthreshold swing (SS) and optimize the gate capacitance and gate-to-drain capacitance. The electrical characteristics of the proposed devices are analyzed in terms of subthreshold swing, ambipolar current, intrinsic capacitances, cut-off frequency, and transconductance. The work aims to improve the analog performance of the proposed devices without forfeiting the digital performance much. A detailed simulation study of the proposed structures is performed using the Silvaco Atlas 2-D device simulator and compared with existing structures of contemporary literature. The study reveals that the proposed structures can be utilized in RF applications and low-power VLSI applications as well.
栅极-漏极叠加和通道工程ttfet的直流和模拟/射频性能分析
本文分析了双材料双栅漏迭隧道场效应管(DMUDG- TFET)和沟道口袋型DMUDG- cp TFET的直流和射频性能。工作表明,所提出的器件在不影响传统DMDG TFET双极电流的情况下提供高导通电流。所提出的结构工程使器件具有较好的亚阈值摆幅(SS),优化栅极电容和栅极漏极电容。从亚阈值摆幅、双极电流、固有电容、截止频率和跨导等方面分析了所提出器件的电气特性。这项工作的目的是在不损失太多数字性能的情况下提高所提出设备的模拟性能。使用Silvaco Atlas 2-D设备模拟器对所提出的结构进行了详细的模拟研究,并与当代文献中的现有结构进行了比较。研究表明,所提出的结构也可用于RF应用和低功耗VLSI应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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