Sudipta Ghosh, Sayan Bose, Wahid Anwar, Madhusree Banerjee, P. Venkateswaran, S. Sarkar
{"title":"DC and Analog/RF Performance Analysis of Gate-Drain Underlapped and Channel Engineered TFET","authors":"Sudipta Ghosh, Sayan Bose, Wahid Anwar, Madhusree Banerjee, P. Venkateswaran, S. Sarkar","doi":"10.1109/VLSIDCS53788.2022.9811483","DOIUrl":null,"url":null,"abstract":"In this paper, the DC and RF performance of a dual material double gate-drain underlapped tunnel FET (DMUDG TFET) and a DMUDG TFET with channel pocketing (DMUDG-CP TFET) are analyzed. It has been shown in the work that the proposed devices delivered a high ON current without compromising the ambipolar current of a conventional DMDG TFET. The proposed structural engineering served the device to have a reasonably good subthreshold swing (SS) and optimize the gate capacitance and gate-to-drain capacitance. The electrical characteristics of the proposed devices are analyzed in terms of subthreshold swing, ambipolar current, intrinsic capacitances, cut-off frequency, and transconductance. The work aims to improve the analog performance of the proposed devices without forfeiting the digital performance much. A detailed simulation study of the proposed structures is performed using the Silvaco Atlas 2-D device simulator and compared with existing structures of contemporary literature. The study reveals that the proposed structures can be utilized in RF applications and low-power VLSI applications as well.","PeriodicalId":307414,"journal":{"name":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS53788.2022.9811483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the DC and RF performance of a dual material double gate-drain underlapped tunnel FET (DMUDG TFET) and a DMUDG TFET with channel pocketing (DMUDG-CP TFET) are analyzed. It has been shown in the work that the proposed devices delivered a high ON current without compromising the ambipolar current of a conventional DMDG TFET. The proposed structural engineering served the device to have a reasonably good subthreshold swing (SS) and optimize the gate capacitance and gate-to-drain capacitance. The electrical characteristics of the proposed devices are analyzed in terms of subthreshold swing, ambipolar current, intrinsic capacitances, cut-off frequency, and transconductance. The work aims to improve the analog performance of the proposed devices without forfeiting the digital performance much. A detailed simulation study of the proposed structures is performed using the Silvaco Atlas 2-D device simulator and compared with existing structures of contemporary literature. The study reveals that the proposed structures can be utilized in RF applications and low-power VLSI applications as well.