GeO2/PZT resistive random access memory devices with Ni electrode

Abstract

We report a resistive random-access memory (RRAM) using stacked GeO₂ and PZT. Under unipolar mode operation, the Ni/GeO₂/PZT/TaN RRAM shows a good DC cycling of 2×10³ cycles, 85°C retention, and large resistance window about 120x, which is better than that shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO₂.