Mobile Charge Carrier Based Modeling of 4H–21 DNTT and Structure Analysis of OTFT

Abstract

Intensive research on the OSC-P-type has resulted in sufficient mobility and an on-off relationship. Thin Film Transistors have a pervasive presence in novel and traditional technologies. This paper presents structure analysis based on our developed TCAD model of 4H-21 DNTT OTFT. The report is primarily based on disorder description and charge carrier recombination. The reported model has included Band- Gap modling and deep and tail DOS (Density of State). The design is tested with experimental figures.