Effects of alloying elements (Pt or Co) on nickel-based contact technology for GeSn layers

A. Quintero, P. Gergaud, J. Hartmann, V. Reboud, E. Cassan, P. Rodriguez
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Abstract

We have investigated the impact Pt or Co alloying have on Ni-based metallization in order to efficiently contact GeSn layers. In-situ X-ray diffraction (XRD), atomic force microscopy (AFM) and Sheet resistance (Rsh) measurements were performed. Solid-state reactions, surface morphology and electrical properties were studied, as a function of temperature annealing. Special attention was paid to differences depending on the alloying element.
合金元素(Pt或Co)对GeSn层镍基接触技术的影响
为了有效地接触GeSn层,我们研究了Pt或Co合金化对ni基金属化的影响。进行了原位x射线衍射(XRD)、原子力显微镜(AFM)和薄片电阻(Rsh)测量。研究了固相反应、表面形貌和电学性能随退火温度的变化规律。特别注意了不同合金元素的差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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