{"title":"Highly controlled microcrystalline silicon growth using in-situ Raman spectroscopy","authors":"T. Fink, S. Muthmann, M. Meier","doi":"10.1109/PVSC.2015.7356213","DOIUrl":null,"url":null,"abstract":"The growth of PV grade microcrystalline silicon using plasma enhanced chemical vapor deposition is realized in a narrow process window. Thus, the stability and the controllability of deposition processes is challenging. Process drifts occur between two different deposition runs or within a single deposition run, which can lead to microcrystalline silicon material that is not optimal for thin-film silicon device applications. In the present work, we use in-situ Raman spectroscopy during silicon deposition to study the growth with high temporal and depth resolution in growth direction. It is shown that with a homogeneous crystallinity profile in growth direction the solar device conversion efficiency was increased from 7.29% to 7.67%. Hence, in this paper it is demonstrated that using in-situ Raman spectroscopy is suitable for highly controlled microcrystalline silicon processing.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7356213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The growth of PV grade microcrystalline silicon using plasma enhanced chemical vapor deposition is realized in a narrow process window. Thus, the stability and the controllability of deposition processes is challenging. Process drifts occur between two different deposition runs or within a single deposition run, which can lead to microcrystalline silicon material that is not optimal for thin-film silicon device applications. In the present work, we use in-situ Raman spectroscopy during silicon deposition to study the growth with high temporal and depth resolution in growth direction. It is shown that with a homogeneous crystallinity profile in growth direction the solar device conversion efficiency was increased from 7.29% to 7.67%. Hence, in this paper it is demonstrated that using in-situ Raman spectroscopy is suitable for highly controlled microcrystalline silicon processing.