Highly controlled microcrystalline silicon growth using in-situ Raman spectroscopy

T. Fink, S. Muthmann, M. Meier
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引用次数: 1

Abstract

The growth of PV grade microcrystalline silicon using plasma enhanced chemical vapor deposition is realized in a narrow process window. Thus, the stability and the controllability of deposition processes is challenging. Process drifts occur between two different deposition runs or within a single deposition run, which can lead to microcrystalline silicon material that is not optimal for thin-film silicon device applications. In the present work, we use in-situ Raman spectroscopy during silicon deposition to study the growth with high temporal and depth resolution in growth direction. It is shown that with a homogeneous crystallinity profile in growth direction the solar device conversion efficiency was increased from 7.29% to 7.67%. Hence, in this paper it is demonstrated that using in-situ Raman spectroscopy is suitable for highly controlled microcrystalline silicon processing.
利用原位拉曼光谱技术高度控制微晶硅生长
利用等离子体增强化学气相沉积技术,在较窄的工艺窗口内实现了PV级微晶硅的生长。因此,沉积过程的稳定性和可控性是具有挑战性的。工艺漂移发生在两个不同的沉积运行之间或在单个沉积运行中,这可能导致微晶硅材料不是薄膜硅器件应用的最佳选择。在本工作中,我们使用原位拉曼光谱在硅沉积过程中对生长方向进行了高时间和深度分辨率的研究。结果表明,在生长方向上结晶度均匀的情况下,太阳能器件的转换效率从7.29%提高到7.67%。因此,本文证明了原位拉曼光谱技术适用于高度可控的微晶硅加工。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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