Determining redundancy requirements for memory arrays with critical area analysis

J. Segal, S. Bakarian, J. E. Colburn, Madan Kumar, Chang Hong, A. Shubat
{"title":"Determining redundancy requirements for memory arrays with critical area analysis","authors":"J. Segal, S. Bakarian, J. E. Colburn, Madan Kumar, Chang Hong, A. Shubat","doi":"10.1109/MTDT.1999.782683","DOIUrl":null,"url":null,"abstract":"Using in-line defect data, critical area analysis of cell layout, and a rule-based algorithm to associate critical areas with electrical faults, we can determine the optimum redundancy configuration for any memory circuit. The technique predicts the yield for a range of redundancy configurations and finds the optimum number of redundant rows and columns for any memory design based on yield and die size considerations.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20

Abstract

Using in-line defect data, critical area analysis of cell layout, and a rule-based algorithm to associate critical areas with electrical faults, we can determine the optimum redundancy configuration for any memory circuit. The technique predicts the yield for a range of redundancy configurations and finds the optimum number of redundant rows and columns for any memory design based on yield and die size considerations.
通过关键区域分析确定存储器阵列的冗余要求
利用内联缺陷数据、单元布局的关键区域分析以及将关键区域与电气故障关联的基于规则的算法,我们可以确定任何存储电路的最佳冗余配置。该技术预测了一系列冗余配置的产量,并根据产量和模具尺寸的考虑,找到任何存储器设计的最佳冗余行和列数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
文献相关原料
公司名称 产品信息 采购帮参考价格
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信