Selective photodiodes for ultraviolet based on metal-AlGaN solid solutions

Abstract

The structures based on Ag-AlGaN Schottky barriers have been manufactured. It allowed to realize photodetectors which have a long wavelength edge of photosensitivity less than 350 nm. The half-width was in a range of 15-40 nm depending on the Ag layer thickness varied from 15 to 150 nm. Selective photodetectors based on Au-AlGaN were obtained with the following parameters: half-width of 5-6 nm, 351-373 nm range of photosensitivity with a maximum at 355 nm, 362 nm, 366 nm and a sensitivity to 140 mA/W.