High power LDMOS integrated Doherty amplifier for W-CDMA

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI:10.1109/RFIC.2006.1651183

I. Blednov, J. van der Zanden

引用次数: 10

Abstract

To our knowledge a first integrated Doherty amplifier in a standard SOT502 package has been developed for WCDMA applications. This solution is based on 10W MMIC Doherty cell combined in parallel. The MMIC is based on the latest Philips LDMOST technology (Gen 6) and showed state of the art performance: 42% Eff has been measured at IMD3 level of -40dBc. Further improvement of linearity to below -50dBc was provided by digital pre-distortions. We believe this approach can be used to achieve powers above 120W. Moreover this approach will lead to a lower cost, more reliable and manufacturable Doherty product

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用于W-CDMA的大功率LDMOS集成Doherty放大器

据我们所知，已经为WCDMA应用开发了标准SOT502封装中的第一个集成多尔蒂放大器。该解决方案基于10W MMIC Doherty单元并联组合。MMIC基于最新的飞利浦LDMOST技术(第6代)，表现出最先进的性能:在-40dBc的IMD3水平下测量到42%的Eff。通过数字预失真将线性度进一步提高到-50dBc以下。我们相信这种方法可以实现120W以上的功率。此外，这种方法将导致成本更低，更可靠和可制造的Doherty产品

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

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