Zero-standby-power Nonvolatile Standard Cell Memory Using FiCC for IoT Processors with Intermittent Operations

Yuki Abe, Kazutoshi Kobayashi, Jun Shiomi, H. Ochi
{"title":"Zero-standby-power Nonvolatile Standard Cell Memory Using FiCC for IoT Processors with Intermittent Operations","authors":"Yuki Abe, Kazutoshi Kobayashi, Jun Shiomi, H. Ochi","doi":"10.1109/coolchips54332.2022.9772704","DOIUrl":null,"url":null,"abstract":"A standard cell memory (SCM) is a memory constructed with standard cells and implemented by logic synthesis and automatic placement and routing, which enables stable operation in the low voltage region compared to an SRAM. In this paper, we show the measurement results of a nonvolatile SCM (NV-SCM) using a Fishbone-in-Cage Capacitor (FiCC), which is suitable for IoT processors with intermittent operations. The NV-SCM was fabricated in a 180 nm standard CMOS process technology. The area overhead from the nonvolatility of bit cells is 74%. We confirmed full functionality of the NV-SCM. In the normal read/write and the data restore operation, the NV-SCM can operate up to 21 MHz. The data retention time was 95 minutes when the write time to the nonvolatile memory was 0.3 seconds and the reading voltage was set to 1.4 V. The simulation results show that the proposed NV-SCM can reduce the energy consumption by 51.19% compared to a conventional volatile SCM when hybernation/normal operation time ratio is 500.","PeriodicalId":266152,"journal":{"name":"2022 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/coolchips54332.2022.9772704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A standard cell memory (SCM) is a memory constructed with standard cells and implemented by logic synthesis and automatic placement and routing, which enables stable operation in the low voltage region compared to an SRAM. In this paper, we show the measurement results of a nonvolatile SCM (NV-SCM) using a Fishbone-in-Cage Capacitor (FiCC), which is suitable for IoT processors with intermittent operations. The NV-SCM was fabricated in a 180 nm standard CMOS process technology. The area overhead from the nonvolatility of bit cells is 74%. We confirmed full functionality of the NV-SCM. In the normal read/write and the data restore operation, the NV-SCM can operate up to 21 MHz. The data retention time was 95 minutes when the write time to the nonvolatile memory was 0.3 seconds and the reading voltage was set to 1.4 V. The simulation results show that the proposed NV-SCM can reduce the energy consumption by 51.19% compared to a conventional volatile SCM when hybernation/normal operation time ratio is 500.
使用FiCC的零待机功耗非易失性标准单元存储器用于间歇操作的物联网处理器
标准单元存储器(SCM)是由标准单元构成的存储器,通过逻辑合成和自动放置和路由实现,与SRAM相比,它可以在低电压区域稳定运行。在本文中,我们展示了使用鱼骨笼中电容器(FiCC)的非易失性SCM (NV-SCM)的测量结果,该电容器适用于具有间歇性操作的物联网处理器。NV-SCM采用180 nm标准CMOS工艺制造。位单元的非易失性造成的面积开销为74%。我们确认了NV-SCM的全部功能。在正常的读写和数据恢复操作中,NV-SCM的工作频率最高可达21mhz。当写入非易失性存储器的时间为0.3秒,读取电压为1.4 V时,数据保留时间为95分钟。仿真结果表明,当混合/正常工作时间比为500时,所提出的NV-SCM比传统的挥发性SCM能耗降低51.19%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信