Search of resource to control properties LP CVD SiO2 layers by monosilane oxidation

Abstract

The effect of reducing the homogeneous part of the monosilane oxidation process by reducing the process pressure on the properties of the SiO2 layers was investigated. This led to a reduction of the surface layers roughness, decreasing the number and the size of inclusions, reducing the fixed oxide charge, permittivity at the temperature of liquid nitrogen, and leakage currents through the insulator.