Inductance Modeling for On-chip interconnects using Elevated coplanar waveguide

R. Ranjithkumar, S. Rajaram, S. Raju, V. Abhaikumar
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Abstract

As technology advances into the very deep submicron era, the operating frequencies are fast reaching the vicinity of several gigahertz and switching times are getting to the sub nanosecond levels. The ever increasing quest for high speed applications highlighted the previously negligible inductive effects of interconnects, such as signal delay, over shoot, and crosstalk as stated in R. Achar and M. S. Nakhla (2001). At gigahertz frequencies, long interconnect wires exhibit transmission line behavior. This paper describes the inductive effects of on-chip interconnects using elevated coplanar waveguide structure as a transmission line for multilayer chip. It uses realistic test structures that study the inductive effect of local interconnects to typical power and ground grids. Electrical equivalent modeling for ECPW was derived using complex image method. ECPW structure was designed for 10GHz and simulated in Ansoft HFSS V9.2.1. ECPW structure shows an insertion loss of 0.02 dB and return loss of -23 dB. Also shows the inductive reactance dominates the resistance at higher frequencies
采用高架共面波导的片上互连电感建模
随着技术进入极深亚微米时代,工作频率正迅速达到几千兆赫兹附近,开关时间正达到亚纳秒水平。对高速应用的不断增长的追求突出了以前可忽略的互连的感应效应,如信号延迟、过射和串扰,如R. Achar和M. S. Nakhla(2001)所述。在千兆赫频率下,长互连线表现出传输线的行为。本文介绍了采用高架共面波导结构作为多层芯片传输线的片上互连的感应效应。它采用真实的测试结构来研究局部互连对典型电网和地网的感应效应。采用复像法建立了ECPW的电等效模型。设计了10GHz的ECPW结构,并在Ansoft HFSS V9.2.1中进行了仿真。ECPW结构的插入损耗为0.02 dB,回波损耗为-23 dB。还表明,在较高的频率下,感应电抗占主导地位
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