Potential of biomass EUV non-CAR type resist for high-NA EUV lithography

Abstract

A biomass EUV non-CAR type resist is proposed as a sustainable material for reducing CO2 emissions. It was demonstrated that HP 8 nm L/S pattern formation is required for a 1.5 nm node device with a biomass EUV resist. Furthermore, two approaches for improving the EUV lithography performance of biomass EUV resists are proposed: resist structure and lithography process improvement. The pattern quality was improved upon improving the resist structure. In addition, the lithography process [pre-exposure metal infiltration (PreMi) process and the new lithography process] improved the sensitivity of the biomass EUV resist. This proves that the biomass EUV resist can be used in high-NA EUV lithography at 8 nm.