Ferroelectricity in Sodium Nitrite Thin Films

A. Britwum, M. Donkor, F. Boakye, R. K. Nkum
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Abstract

Investigations have been conducted on the ferroelectric property of thin films of NaNO2. The thin films were prepared with the dip coating technique. The phase transition was investigated by observing the change in the dielectric constant with temperature change. The presence of ferro-electricity was investigated with a Sawyer-Tower Bridge. UV-VIS absorbance spectroscopy was used to determine the energy band gap and the extinction coefficient at room temperature. It was observed thatNaNO2 thin film undergoes a first order transition from the disordered paraelectric phase to an ordered ferroelectric phase at 162.3�C. Ferroelectricity was confirmed in the NaNO2 thin films by the appearance of a hysteresis loop below the transition temperature. The band gap of the thin film was 3.102 eV. The ferroelectric property exhibited by the NaNO2 thin films do not make it a favourable choice for modern day ferroelectric devices. However, this may be im-proved by doping the thin film with chlorine ions.
亚硝酸钠薄膜中的铁电性
对纳米2薄膜的铁电性能进行了研究。采用浸涂技术制备薄膜。通过观察介电常数随温度变化的变化来研究相变。用索亚塔桥考察了铁电的存在。采用紫外可见吸收光谱法测定了该材料在室温下的能带隙和消光系数。结果表明,在162.3℃温度下,纳米2薄膜由无序的准电相向有序的铁电相发生了一级转变。在转变温度以下出现的磁滞回线证实了纳米2薄膜的铁电性。薄膜的带隙为3.102 eV。NaNO2薄膜所表现出的铁电性质并不使其成为现代铁电器件的有利选择。然而,这可以通过在薄膜中掺杂氯离子来改善。
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