Demonstration of a novel multiple-valued T-gate using multiple-junction surface tunnel transistors and its application to three-valued data flip-flop

T. Uemura, T. Baba
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引用次数: 13

Abstract

A novel T-gate consisting of multi-junction surface tunnel transistors (MJ-STTs) and hetero-junction FETs (HJFETs) were proposed and its operation was successfully confirmed by both simulation and experiment. The number of the devices required for their-gate can be drastically reduced due to a high functionality of the MJ-STT. Only three MJ-STTs and three HJFETs were required to fabricate the three-valued T-gate, whose number is less than one half of that of the conventional circuit. The fabricated circuit exhibited a basic T-gate operation with various logic function. Furthermore, a multiple-valued data flip-flop (D-FF) circuit could be realized by only one T-gate.
基于多结表面隧道晶体管的新型多值t型栅极的演示及其在三值数据触发器中的应用
提出了一种由多结表面隧道晶体管(MJ-STTs)和异质结场效应管(hjfet)组成的新型t型栅极,并通过仿真和实验验证了其工作原理。由于MJ-STT的高功能,其栅极所需的器件数量可以大大减少。仅需要3个mj - stt和3个hjfet来制造三值t栅极,其数量不到传统电路的一半。所制备的电路具有基本的t门运算和各种逻辑功能。此外,只需一个t门即可实现多值数据触发器(D-FF)电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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