Using design based binning to improve defect excursion control for 45nm production

C. Huang, C. Young, H. Liu, S. F. Tzou, D. Tsui, A. Tsai, E. Chang
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引用次数: 12

Abstract

For advanced device (45 nm and below), we proposed a novel method to monitor systematic and random excursion. By integrating design information and defect inspection results into automated software (DBB), we can identify design/process marginality sites with defect inspection tool. In this study, we applied supervised binning function (DBC) and defect criticality index (DCI) to identify systematic and random excursion problems on 45 nm SRAM wafers. With established SPC charts, we will be able to detect future excursion problem in manufacturing line early.
采用基于设计的分形技术改进45nm工艺的缺陷偏移控制
对于先进器件(45 nm及以下),我们提出了一种监测系统和随机偏移的新方法。通过将设计信息和缺陷检查结果集成到自动化软件(DBB)中,我们可以用缺陷检查工具识别设计/过程边缘点。在这项研究中,我们应用监督结合函数(DBC)和缺陷临界指数(DCI)来识别45纳米SRAM晶圆上的系统和随机偏移问题。有了建立的SPC图表,我们将能够及早发现生产线未来的偏移问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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